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Description
ON SEMICONDUCTOR TIP3055G Bipolar (BJT) Single Transistor, NPN, 60 V, 2.5 MHz, 90 W, 15 A, 5 hFEThe TIP3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. Excellent safe operating area DC Current gain(hFE = 20 to 70 at Ic = 4ADC) Collector emitter saturation voltage(Vce (sat) = 1. 1VDC maximum at Ic = 4ADC) Applications Industrial, Power Management Product details Power Dissipation Pd 90W DC Collector Current 15A Collector Emitter Voltage V(br)ceo 60V Transition
- Excellent safe operating area
- DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
- Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)
Applications
Industrial, Power Management
Product details
| Power Dissipation Pd | 90W |
| DC Collector Current | 15A |
| Collector Emitter Voltage V(br)ceo | 60V |
| Transition Frequency ft | 2.5MHz |
| Operating Temperature Max | 150°C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 5hFE |
| No. of Pins | 3Pins |
| Product Range | TIPxxx Series |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-247 |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | TIP3055G |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN |
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Shipping Notes
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