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Ships within 48 hours · Estimated delivery Jul 23 - Jul 28
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Description
VISHAY IRFBE30PBF Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 VThe IRFBE30PBF is a 800V N channel Power MOSFET, third generation HEXFET power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on resistance. The package is universally preferred for all commercial industrial applications at power dissipation levels to approximately 50W. Dynamic dV dt rating Repetitive avalanche rated 150C Operating temperature Easy to parallel Simple drive requirement
- Dynamic dV/dt rating
- Repetitive avalanche rated
- 150�C Operating temperature
- Easy to parallel
- Simple drive requirement
Applications
Power Management
Product details
| Power Dissipation Pd | 125W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 4.1A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Drain Source Voltage Vds | 800V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220AB |
| On Resistance Rds(on) | 3ohm |
| MSL | - |
Other details
| Brand | VISHAY |
| Part Number | IRFBE30PBF |
| Quantity | Each |
| Technical Data Sheet EN |
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Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
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