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Description
INFINEON IPP65R225C7XKSA1 Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 VThe IPP65R225C7 is a 650V CoolMOS C7 N channel Power MOSFET features lower gate charge. This CoolMOS is a revolutionary technology for high voltage power MOSFET, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS� quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Footnotes
Product details
| Power Dissipation Pd | 63W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 11A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3.5V |
| Product Range | - |
| Drain Source Voltage Vds | 650V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220 |
| On Resistance Rds(on) | 0.199ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPP65R225C7XKSA1 |
| Quantity | Each |
| Technical Data Sheet EN |
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Shipping Notes
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Exchange/Return Notes
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