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Description
MULTICOMP 2N2905 Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40 V, 200 MHz, 3 W, 600 mA, 100 hFEThe 2N2905 from Multicomp is a through hole, silicon planar PNP low power bipolar transistors in TO 39 metal can package. This are general purpose transistor suitable for switching applications. Collector emitter voltage (Vce) of 40V Continuous collector current (Ic) of 600mA Power dissipation of 600mW Operating junction temperature range from 65C to 200C Collector emitter saturation voltage of 400mV at Ic=150mA DC current gain is greater than 30 at
- Collector emitter voltage (Vce) of -40V
- Continuous collector current (Ic) of -600mA
- Power dissipation of 600mW
- Operating junction temperature range from -65°C to 200°C
- Collector emitter saturation voltage of -400mV at Ic=150mA
- DC current gain is greater than 30 at Ic=500mA
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Product details
| Power Dissipation Pd | 3W |
| DC Collector Current | 600mA |
| Collector Emitter Voltage V(br)ceo | 40V |
| Transition Frequency ft | 200MHz |
| Operating Temperature Max | 200°C |
| Transistor Polarity | PNP |
| DC Current Gain hFE | 100hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-39 |
| MSL | - |
Other details
| Brand | MULTICOMP |
| Part Number | 2N2905 |
| Quantity | Each |
| Technical Data Sheet EN |
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