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Description
IRF 6725M 6725 N-Channel Power MOSFETDescription The IRF6725MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on state resistance in a package that has the footprint of a MICRO 8 and only 0. 7 mm profile. The directFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra red or convection soldering techniques, when application note AN 1035
Description
The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The directFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6725MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6725MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.
Charactiristics IRF6725M MOSFET transistor
- Type: N-channel
- Drain-to-Source Breakdown Voltage: 30 V
- Gate-to-Source Voltage, max: ±20 V
- Drain-Source On-State Resistance, max: 2.200 Ohm
- Continuous Drain Current: 170 A
- Total Gate Charge: 36 nC
- Power Dissipation: 100 W
- Package: DIRECTFET MX
Shipping Notes
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
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