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Description
ON SEMICONDUCTOR BD139G Bipolar (BJT) Single Transistor, General Purpose, NPN, 80 V, 1.25 W, 1.5 A, 40 hFEThe BD139G is an NPN Plastic Medium Power Silicon Transistor designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. High DC current gain Halogen free Applications Industrial Product details Power Dissipation Pd 1. 25W DC Collector Current 1. 5A Collector Emitter Voltage V(br)ceo 80V Transition Frequency ft Operating Temperature Max 150C Transistor Polarity NPN DC Current Gain hFE 40hFE No. of Pins
- High DC current gain
- Halogen-free
Applications
Industrial
Product details
| Power Dissipation Pd | 1.25W |
| DC Collector Current | 1.5A |
| Collector Emitter Voltage V(br)ceo | 80V |
| Transition Frequency ft | - |
| Operating Temperature Max | 150°C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 40hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-225AA |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | BD139G |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN |
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