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Ships within 48 hours · Estimated delivery Jul 21 - Jul 26
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Description
IRFP 264 250V 8A <0.075E N - MOSFETThe IRFP264 is a high voltage N channel power MOSFET designed for efficiency and reliability. With a voltage rating of 250V 8A and a low on state resistance of <0. 075 ohms, it delivers optimal power handling and performance. It is ideal for power supplies, lighting systems, and industrial applications requiring reliable high voltage switching capabilities. Features: Dynamic dV dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast
The IRFP264 is a high-voltage N-channel power MOSFET designed for efficiency and reliability. With a voltage rating of 250V/8A and a low on-state resistance of <0.075 ohms, it delivers optimal power handling and performance. It is ideal for power supplies, lighting systems, and industrial applications requiring reliable high-voltage switching capabilities.
Features:
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
Specifications:
|
Description |
Value |
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Drain-source voltage VDS |
250 V |
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Gate-source voltage VGS |
± 20 V |
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Continuous drain current ID |
VGS at 10 V |
TC = 25 °C |
38 A |
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TC = 100 °C |
24 A |
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Pulsed drain current IDM |
150 A |
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Linear derating factor |
2.2 W/°C |
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Single pulse avalanche energy EAS |
1000 mJ |
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Repetitive avalanche current IAR |
38 A |
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Repetitive avalanche energy EAR |
28 mJ |
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Maximum power dissipation PD |
TC = 25 °C |
280 W |
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Peak diode recovery dV/dt |
4.8 V/ns |
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Operating junction and storage temperature range TJ, Tstg |
-55 to +150°C |
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Soldering recommendations (peak temperature) d |
for 10 s |
300°C |
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Mounting torque |
6-32 or M3 screw |
10 lbf · in |
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1.1 N · m |
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Drain-source on-state resistance RDS(on) |
VGS =10V |
ID = 23 A b |
0.075 A |
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Shipping Notes
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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